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Freescale Semiconductor

Technical Data

Document Number: MRF8P20140WH

Rev. 1, 11/2013

RF Power Field Effect Transistors

N--Channel Enhancement--Mode Lateral MOSFETs

Designed for CDMA base station applications with frequencies from 1880 to

2025 MHz. Can be used in Class AB and Class C for all typical cellular base

station modulation formats.



Typical Doherty Single--Carrier W--CDMA Performance: V

= 28 Volts,

DQA

= 500 mA, V

GSB

= 1.2 Vdc, P

out

= 24 Watts Avg., IQ Magnitude

Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB

@ 0.01% Probability on CCDF.

Frequency

1880 MHz

1920 MHz

2025 MHz

(dB)

16.0

15.9



(%)

42.8

43.7

42.0

Output PAR

(dB)

8.0

8.1

ACPR

(dBc)

--31.0

--32.6

--31.2

MRF8P20140WHR3

MRF8P20140WHSR3

MRF8P20140WGHSR3

1880-

-2025 MHz, 24 W AVG., 28 V

SINGLE W-

-CDMA

LATERAL N-

-CHANNEL

RF POWER MOSFETs



Capable of Handling 10:1 VSWR, @ 30 Vdc, 1920 MHz, 160 Watts CW

(1)

Output Power (3 dB Input Overdrive from Rated P

out

)



Typical P

out

@ 3 dB Compression Point

≃

170 Watts

(1)

Features



Designed for Wide Instantaneous Bandwidth Applications. VBW

res

≃

240 MHz.



Designed for Wideband Applications that Require 160 MHz Signal Bandwidth



Production Tested in a Symmetrical Doherty Configuration



100% PAR Tested for Guaranteed Output Power Capability



Characterized with Large--Signal Load--Pull Parameters and Common Source

S--Parameters



Internally Matched for Ease of Use



Integrated ESD Protection



Greater Negative Gate--Source Voltage Range for Improved Class C

Operation



Designed for Digital Predistortion Error Correction Systems



NI--780H--4L in Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width,

13--inch Reel.



NI--780S--4L, NI--780GS--4L in Tape and Reel. R3 Suffix = 250 Units, 32 mm

Tape Width, 13--inch Reel.

NI-

-780H-

-4L

MRF8P20140WHR3

NI-

-780S-

-4L

MRF8P20140WHSR3

NI-

-780GS-

-4L

MRF8P20140WGHSR3

inA

GSA

1 RF

outA

DSA

inB

GSB

2 RF

outB

DSB

(Top View)

Figure 1. Pin Connections

1. P3dB = P

avg

+ 7.0 dB where P

avg

is the average output power measured using an unclipped W--CDMA single--carrier input signal where

output PAR is compressed to 7.0 dB @ 0.01% probability on CCDF.



MRF8P20140WHR3 MRF8P20140WHSR3 MRF8P20140WGHSR3

RF Device Data

Freescale Semiconductor, Inc.

Table 1. Maximum Ratings

Rating

Drain--Source Voltage

Gate--Source Voltage

Operating Voltage

Storage Temperature Range

Case Operating Temperature

Operating Junction Temperature

(1,2)

CW Operation @ T

= 25C

Derate above 25C

Symbol

DSS

stg

Value

--0.5, +65

--6.0, +10

32, +0

--65 to +150

125

225

140

0.66

Unit

Vdc

C

W/C

Table 2. Thermal Characteristics

Characteristic

Thermal Resistance, Junction to Case

Case Temperature 80C, 24 W CW, 28 Vdc, I

DQA

= 500 mA, V

GSB

= 1.2 Vdc, 1920 MHz

Case Temperature 96C, 130 W CW

(3)

, 28 Vdc, I

DQA

= 500 mA, V

GSB

= 1.2 Vdc, 1920 MHz

Symbol

JC

Value

(2,3)

0.68

0.40

Unit

C/W

Table 3. ESD Protection Characteristics

Test Methodology

Human Body Model (per JESD22--A114)

Machine Model (per EIA/JESD22--A115)

Charge Device Model (per JESD22--C101)

Class

Table 4. Electrical Characteristics

= 25C unless otherwise noted)

Characteristic

Off Characteristics

(4)

Zero Gate Voltage Drain Leakage Current

= 65 Vdc, V

= 0 Vdc)

Zero Gate Voltage Drain Leakage Current

= 28 Vdc, V

= 0 Vdc)

Gate--Source Leakage Current

= 5 Vdc, V

= 0 Vdc)

On Characteristics

(4,5)

Gate Threshold Voltage

= 10 Vdc, I

= 200

Adc)

Gate Quiescent Voltage

= 28 Vdc, I

= 500 mAdc)

Fixture Gate Quiescent Voltage

(6)

= 28 Vdc, I

= 500 mAdc, Measured in Functional Test)

Drain--Source On--Voltage

= 10 Vdc, I

= 2 Adc)

GS(th)

GSA(Q)

GGA(Q)

DS(on)

1.1

—

4.5

0.1

1.8

2.6

5.2

0.2

2.6

—

6.0

0.3

Vdc

DSS

GSS

—

Adc

Symbol

Min

Typ

Max

Unit

1. Continuous use at maximum temperature will affect MTTF.

2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF

calculators by product.

3. Refer to AN1955,

Thermal Measurement Methodology of RF Power Amplifiers.

Go to http://www.freescale.com/rf.

Select Documentation/Application Notes -- AN1955.

4. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.

5. Each side of device measured separately.

6. V

DDA

and V

DDB

must be tied together and powered by a single DC power supply.

7. V

= 2.0 x V

GS(Q)

. Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit

schematic.

(continued)

MRF8P20140WHR3 MRF8P20140WHSR3 MRF8P20140WGHSR3

RF Device Data

Freescale Semiconductor, Inc.

Table 4. Electrical Characteristics

= 25C unless otherwise noted)

(continued)

Characteristic

Symbol

Min

Typ

Max

Unit

Functional Tests

(1,2,3,4)

(In Freescale Doherty Test Fixture, 50 ohm system) V

= 28 Vdc, I

DQA

= 500 mA, V

GSB

= 1.2 Vdc,

out

= 24 W Avg., f1 = 1880 MHz, f2 = 1910 MHz, 2--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.8 dB @ 0.01%

Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @

5

MHz Offset.

Power Gain

Drain Efficiency

Output Peak--to--Average Ratio @ 0.01% Probability on CCDF

Adjacent Channel Power Ratio



PAR

ACPR

15.0

37.5

7.3

—

16.0

41.2

7.7

--31.9

18.0

—

--29.5

dBc

Typical Performance over Frequency

(3)

—

(In Freescale Doherty Test Fixture, 50 ohm system) V

= 28 Vdc, I

DQA

= 500 mA, V

GSB

= 1.2

Vdc, P

out

= 24 W Avg., Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR

measured in 3.84 MHz Channel Bandwidth @

5

MHz Offset.

Frequency

1880 MHz

1920 MHz

2025 MHz

(dB)

16.0

15.9



(%)

42.8

43.7

42.0

Output PAR

(dB)

8.0

8.1

ACPR

(dBc)

--31.0

--32.6

--31.2

Typical Performances

(3)

(In Freescale Doherty Test Fixture, 50 ohm system) V

= 28 Vdc, I

DQA

= 500 mA, V

GSB

= 1.2 Vdc,

1880--2025 MHz Bandwidth

out

@ 1 dB Compression Point, CW

out

@ 3 dB Compression Point

(5)

IMD Symmetry @ 24 W PEP, P

out

where IMD Third Order

Intermodulation



30 dBc

(Delta IMD Third Order Intermodulation between Upper and Lower

Sidebands > 2 dB)

VBW Resonance Point

(IMD Third Order Intermodulation Inflection Point)

Gain Flatness in 145 MHz Bandwidth @ P

out

= 24 W Avg.

Gain Variation over Temperature

(--30C to +85C)

Output Power Variation over Temperature

(--30C to +85C)

(6)

P1dB

P3dB

IMD

sym

—

140

170

133

—

MHz

VBW

res

G

P1dB

—

240

0.25

0.013

0.003

—

MHz

dB/C

DDA

and V

DDB

must be tied together and powered by a single DC power supply.

Part internally matched both on input and output.

Measurement made with device in a Symmetrical Doherty configuration.

Measurement made with device in straight lead configuration before any lead forming operation is applied. Lead forming is used for gull

wing (GHS) parts.

5. P3dB = P

avg

+ 7.0 dB where P

avg

is the average output power measured using an unclipped W--CDMA single--carrier input signal where

output PAR is compressed to 7.0 dB @ 0.01% probability on CCDF.

MRF8P20140WHR3 MRF8P20140WHSR3 MRF8P20140WGHSR3

RF Device Data

Freescale Semiconductor, Inc.

GGA

C18

DDA

C19

C15

C16

C14

C6 C7

C2*

C3*

C10 C11

C26

C23

CUT OUT AREA

C12*

MRF8P20140W

Rev. 1.2

C17

C21

C13*

C22

C20

C25

GGB

C24

DDB

Note 1: * denotes that C2, C3, C12 and C13 are mounted vertically.

Note 2: V

DDA

and V

DDB

must be tied together and powered by a single DC power supply.

Figure 2. MRF8P20140WHR3(WHSR3) Test Circuit Component Layout

Table 5. MRF8P20140WHR3(WHSR3) Test Circuit Component Designations and Values

Part

C2, C3

C4, C8, C18, C24

C6, C10, C12, C13, C14,

C20

C7, C11

C9, C17

C15, C21

C16, C22

C19, C25

C23

C26

R2, R3, R4, R5

R6, R7

PCB

Description

0.6 pF Chip Capacitor

8.2 pF Chip Capacitors

F,

50 V Chip Capacitors

1.2 pF Chip Capacitor

12 pF Chip Capacitors

F,

32 V Chip Capacitors

0.1 pF Chip Capacitors

6.8

F,

50 V Chip Capacitors

2.2

F,

100 V Chip Capacitors

220

F,

100 V Chip Capacitors

0.2 pF Chip Capacitor

1.5 pF Chip Capacitor

,

Chip Resistor

1.5 k, 1/4 W Chip Resistors

2.2

,

1/4 W Chip Resistors

1700--2000 MHz Band 90, 3 dB Hybrid Coupler

0.020,



= 3.5

Part Number

ATC600F0R6BT250XT

ATC600F8R2BT250XT

GRM55DR61H106KA88L

ATC600F1R2BT250XT

ATC600F120JT250XT

GRM32ER61H106KA12L

ATC600F0R1BT250XT

C4532X7R1H685KT

C3225X7R2A225KT

EEV--FK2A221M

ATC600F0R2BT250XT

ATC600F1R5BT250XT

ATCCW12010T0050GBK

CRCW12061K50FKEA

CRCW12062R2FNEA

1P503S

R04350B

Manufacturer

ATC

Murata

ATC

Murata

ATC

TDK

Panasonic--ECG

ATC

Vishay

Anaren

Rogers

MRF8P20140WHR3 MRF8P20140WHSR3 MRF8P20140WGHSR3

RF Device Data

Freescale Semiconductor, Inc.

Single--ended



Quadrature combined



Doherty



Push--pull

Figure 3. Possible Circuit Topologies

MRF8P20140WHR3 MRF8P20140WHSR3 MRF8P20140WGHSR3

RF Device Data

Freescale Semiconductor, Inc.